| PART |
Description |
Maker |
| MGFS39E2527A-01 |
2.5-2.7GHz HBT Integrated Circuit
|
Mitsubishi Electric Semiconductor
|
| SPA1526Z |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
|
RFMD
|
| SPA-1426Z SPA-1426Z-EVB1 SPA-1426Z-EVB2 SPA-1426Z- |
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
|
RF Micro Devices
http://
|
| PB-CGB7009-SC-0000 PB-CGB7009-SP-0000 |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流6.0千兆赫的InGaP HBT，MMIC的或包装，匹配增益模块放大器
|
Mimix Broadband, Inc.
|
| SP8855D SP8855DIGHCAR SP8855DKGHCAR |
1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER
1.7GHz Parallel Load Professional Synthesizer
|
Zarlink Semiconductor Inc.
|
| TQ7625 |
1850-1910 MHz, PSC TDMA Power Amp IC-HBT
3V HBT TDMA Power Amplifier IC
|
TRIQUINT[TriQuint Semiconductor]
|
| MAX2721 MAX2720 MAX2720-MAX2721 MAX2720EUP MAX2721 |
1.7GHz to 2.5GHz, Direct I/Q Modulator with VGA and PA Driver
Direct QPSK Modulator with VGA and PA Driver for 1.7GHz to 2.5GHz Applications 1700 MHz - 2100 MHz RF/MICROWAVE UP CONVERTER, -6 dBm OUTPUT POWER-MAX
Direct QPSK Modulator with VGA and PA Driver for 1.7GHz to 2.5GHz Applications 2100 MHz - 2500 MHz RF/MICROWAVE UP CONVERTER, -2.5 dBm OUTPUT POWER-MAX
|
Maxim Integrated Products, Inc.
|
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HFA3664 HFA3664IA HFA3664IA96 |
2.7GHz UpConverter with Gain Control
|
INTERSIL[Intersil Corporation]
|
| BFG135 |
NPN 7GHz wideband transistor
|
Philips Semiconductors
|
| SZM-2066Z SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EV |
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
|
RF Micro Devices
|
| SY87724L08 SY87724LHEI SY87724LHEY SY87724LHG |
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
Micrel Semiconductor
|
